Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region

Abstract

The impact of the light illumination on the drain current of polycrystalline silicon thin-film transistors (TFT) is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds and Vgs values and transistor sizes W/L. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region.