A Light-impact Model for p-type and n-type poly-Si TFTs

Siskos, Stylianos/ Dimitriadis, Charalampos/ Picos, Rodrigo/ Papadopoulos, Nikolaos/ Hatzopoulos, Alkiviadis/ Papakostas, Dimitrios/ Παπακώστας, Δημήτριος/ Χατζόπουλος, Αλκιβιάδης/ Σίσκος, Στυλιανός/ Δημητριάδης, Χαράλαμπος/ Παπαδόπουλος, Νικόλαος

Institution and School/Department of submitter: ΤΕΙ Θεσσαλονίκης
Keywords: Elemental semiconductors;Spice;Silicon;Thin film transistors
Issue Date: Jul-2009
Publisher: IEEE
Citation: Journal: Journal of Display Technology, vol.5, no.7, 2009
Papakostas, D., Hatzopoulos, A., Papadopoulos, N., Dimitriadis, C. and Picos, R. (2009). A Light-impact Model for p-type and n-type poly-Si TFTs. Journal of Display Technology [online]. 5(7), pp.265-272
Abstract: This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (Id) over the dark current (Idark) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the Vds and Vgs voltages and of light intensities.
Description: Δημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Ηλεκτρονικών Μηχανικών,2009
ISSN: 1551-319X
Other Identifiers: 10.1109/JDT.2009.2015898
Appears in Collections:Δημοσιεύσεις σε Περιοδικά

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