EMC Analysis of High-Speed On-Chip Interconnects via a Mixed Quasi-Static Finite Difference—FEM Technique

Tsiboukis, Theodoros/ Rekanos, Ioannis/ Yioultsis, Traianos/ Kosmanis, Theodoros/ Τσιμπούκης, Θεόδωρος/ Κοσμάνης, Θεόδωρος/ Γιούλτσης, Τραϊανός/ Ρέκανος, Ιωάννης


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dc.contributor.authorTsiboukis, Theodorosel
dc.contributor.authorRekanos, Ioannisel
dc.contributor.authorYioultsis, Traianosel
dc.contributor.authorKosmanis, Theodorosel
dc.contributor.otherΤσιμπούκης, Θεόδωροςel
dc.contributor.otherΚοσμάνης, Θεόδωροςel
dc.contributor.otherΓιούλτσης, Τραϊανόςel
dc.contributor.otherΡέκανος, Ιωάννηςel
dc.date.accessioned2015-07-09T06:48:43Zel
dc.date.accessioned2018-02-28T16:47:05Z-
dc.date.available2015-07-09T06:48:43Zel
dc.date.available2018-02-28T16:47:05Z-
dc.date.issued2007-04el
dc.identifierhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=4137834&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4137834el
dc.identifier10.1109/TMAG.2006.891010el
dc.identifier.citationKosmanis, T.,Tsiboukis,T.,Rekanos,I,T. ([χ.χ.]). EMC Analysis of High-Speed On-Chip Interconnects via a Mixed Quasi-Static Finite Difference—FEM Technique. IEEE Transactions on Magnetics 43. Διαθέσιμο σε: http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4137834&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4137834 (Ανακτήθηκε 9 Ιουλίου 2015).el
dc.identifier.citationJapanese-Mediterranean Workshop on Applied Electromagnetic Engineering for Magnetic, Superconducting and Nano Materialsel
dc.identifier.urihttp://195.251.240.227/jspui/handle/123456789/10346-
dc.descriptionΔημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Οχημάτων,2015el
dc.description.abstractWe present a new technique to investigate electromagnetic compatibility/electromagnetic interference (EMC/EMI) interactions in high-speed transmission lines on the chip level. The time-domain method is based on the different nature of the problem in conductors and semiconductors, compared to the insulating media that separate them. Therefore, the static problem in the silicon oxide is separated from the diffusion problem in conductors. The latter one is solved by an efficient DuFort-Frankel technique, while the static problem is solved in a coarse finite element method (FEM) mesh. In each step, the two problems are appropriately coupled by means of the interface conditions. The time-domain nature of this method permits the use of proper fast Fourier transform (FFT)-based postprocessing procedures to calculate the per unit length parameters in a fast and efficient manner.el
dc.language.isoenel
dc.publisherIEEEel
dc.relation.ispartof4th Japanese-Mediterranean Workshop on Applied Electromagnetic Engineering for Magnetic, Superconducting and Nano Materialsel
dc.rightsThis item is probably protected by Copyright Legislationel
dc.rightsΤο τεκμήριο πιθανώς υπόκειται σε σχετική με τα Πνευματικά Δικαιώματα νομοθεσίαel
dc.source.urihttp://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4137654el
dc.titleEMC Analysis of High-Speed On-Chip Interconnects via a Mixed Quasi-Static Finite Difference—FEM Techniqueel
dc.typeConference articleel
heal.typeotherel
heal.type.enOtheren
heal.dateAvailable2018-02-28T16:48:05Z-
heal.languageelel
heal.accessfreeel
heal.recordProviderΤΕΙ Θεσσαλονίκηςel
heal.fullTextAvailabilityfalseel
heal.type.elΆλλοel
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