Investigation of EMC in High-Speed on-Chip Transmission Lines by a New Hybrid Quasi-Static Finite Difference – FEM Technique

Rekanos, Ioannis/ Yioultsis, Traianos/ Tsiboukis, Theodoros/ Kosmanis, Theodoros/ Γιούλτσης, Τραϊανός/ Κοσμάνης, Θεόδωρος/ Ρέκανος, Ιωάννης/ Τσιμπούκης, Θεόδωρος

Institution and School/Department of submitter: ΤΕΙ Θεσσαλονίκης
Issue Date: Jun-2005
Publisher: IEEE
Citation: Journal: International symposium on electromagnetic compatibillyty egology and electromagnetic Ecology,2005
Kosmanis,T., Tsiboukis,T.and Rekanos,I.,Yioultsis,T.(2005) Electromagnetic compatibility:Russia.June 2005.Russia:IEEE
Abstract: In this paper we present a new computational technique to investigate wave phenomena and EMC/EMI interactions in high speed transmission lines and interconnects on the chip level. The proposed time-domain method is based on the very different nature of the electromagnetic problem in the conductors and semiconductors, compared to the insulating media that separate conducting regions and fill the intermediate volume. Therefore, the purely static problem in the regions filled with silicon oxide is totally separated from the diffusion problem in the conducting regions. The latter one is solved by means of a simple and efficient DuFort-Frankel technique using finite differences, while the static problem is dealt with by means of a finite element method with coarse meshing, since outside the conductors the field variations are much less intense. In each time step, the problems in the two regions are appropriately coupled by means of proper interface conditions.
Description: Δημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Οχημάτων,2015
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Appears in Collections:Δημοσιεύσεις σε Περιοδικά

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