Using the Light-impact Model for p-type and n-type poly-TFT in Circuits

Papakostas, Dimitrios/ Picos, Rodrigo/ Dimitriadis, Charalampos/ Papadopoulos, Nikolaos/ Παπακώστας, Δημήτριος/ Παπαδόπουλος, Νικόλαος/ Δημητριάδης, Χαράλαμπος

Institution and School/Department of submitter: ΤΕΙ Θεσσαλονίκης
Keywords: Thin film transistors;Dark conductivity;Optical feedback;Semiconductor device models
Issue Date: Jun-2011
Publisher: IEEE
Citation: Papakostas, D., Picos, R., Dimitriadis, C. and Papadopoulos, N. (2011). Using the Light-impact Model for p-type and n-type poly-TFT in Circuits. In: International Conference Mixed Design of Integrated Circuits: conference proceedings, Gliwice, 2010. Gliwice: IEEE, pp.113-118.
International Conference Mixed Design of Integrated Circuits and Systems, Gliwice, 2011
Abstract: This paper describes and verifies a light impact model (LIM) for both p-type and n-type poly TFTs. At first the ratio of the produced current under a specific light intensity versus the `dark' current is calculated. Next, comparative results between measurements and simulated characteristics are presented for different sizes of W/L, different values of the Vds, Vgs voltages and of light intensities. Finally, the application of the LIM in the simulation of an optical-feedback driver is given.
Description: Δημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Ηλεκτρονικών Μηχανικών, 2011
ISBN: 978-1-4577-0304-1
Appears in Collections:Δημοσιεύσεις σε Περιοδικά

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