A New Light-Impact Model for p-type and n-type poly-TFT

Papadopoulos, Nikolaos/ Dimitriadis, Charalampos/ Papakostas, Dimitrios/ Siskos, Stylianos/ Picos, Rodrigo/ Hatzopoulos, Alkiviadis/ Σίσκος, Στυλιανός/ Χατζόπουλος, Αλκιβιάδης/ Παπακώστας, Δημήτριος/ Δημητριάδης, Χαράλαμπος/ Παπαδόπουλος, Νικόλαος

Institution and School/Department of submitter: ΤΕΙ Θεσσαλονίκης
Issue Date: Jul-2008
Publisher: IEEE
Citation: Journal: Journal of Display Technology, vol.5, no.7, 2008
Hatzopoulos, A., Dimitriadis, C., Papadopoulos, N., Siskos, S., Picos, R. and Papakostas, D. (2008). A New Light-Impact Model for p-type and n-type poly-TFT. Journal of Display Technology [online]. 5,(7), pp.265-272
Abstract: This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity $(I_{d})$ over the dark current $(I_{\rm dark})$ is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the $V_{\rm ds}$ and $V_{\rm gs}$ voltages and of light intensities.
Description: Δημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Ηλεκτρονικών Μηχανικών, 2008
ISSN: 1551-319X
Other Identifiers: 10.1109/JDT.2009.2015898
Appears in Collections:Δημοσιεύσεις σε Περιοδικά

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